Qucs has most of the fast equation models for FET and Bipolar devices, so that you enter the math model parameters. I have not used it much, but for what I did do, the results are the same as when using MWO. The capabilities of qucs are listed here. Yes, you should draw your own schematic by placing intrinsic model ( of active device ) and peripheral parasitic end environmental elements around it.
#QUCS TOUCHSTONE IMPORT GENERATOR#
Instead, use a RLC model of this resistor by using s-parameters ( Broadband or Narrowband Model SPICE Model Generator of ADS or the others) and use it as model.It's more accurate and troublefree.Ī simple resistor will have an ideal resistor with a parallel capacitor and there will-may be-a series inductor if you work at very high frequencies.It's very simple to modelize a resistor.
S-parameters "AC Small Signal Parameters" and they are not defined at DC !! Because the frequency is Zero at DC, that's why s-parameters can not be used at DC.Even if you use s-parameters of a resistor which a current flows through it, the simulation will be false.The simulator will make an extrapolation down to DC while HB or Transisent simulation is used and therefore simulator will not either converge or will be completely erroneous. The measurement conditions of measured s-parameters are mentioned in s-parameter datafile ( Touchstone or MDIF etc)